Vishay Unveils Gen 3 1200V SiC Schottky Diodes for Enhanced Efficiency and Reliability in Power Designs Featuring MPS Design
Vishay has released new 1200V SiC Schottky diodes that are part of the Gen 3 series. These diodes are designed to improve efficiency and reliability in switching power designs. With a MPS design, the diodes range from 5 A to 40 A and provide lower forward voltage drop, capacitive charge, and reverse leakage current.
Vishay Intertechnology, Inc. has launched 16 new silicon carbide (SiC) Schottky diodes with a Gen 3 1200 V rating. These diodes have a merged PIN Schottky (MPS) design that offers high surge current capability along with low forward voltage drop, capacitive charge, and reverse leakage current. This design helps improve efficiency and reliability in switching power applications.
Today, new SiC diodes with improved features have been introduced, ranging from 5 A to 40 A and available in various package types such as TO-220AC 2L, TO-247AD 2L, TO-247AD 3L, and D²PAK 2L (TO-263AB 2L). These diodes have a low charge capacitance starting from 28 nC and utilize MPS structure with laser annealing technology for a lower forward voltage drop of 1.35 V. With a low reverse leakage current of 2.5 µA at 25 °C, these diodes reduce conduction losses and enhance system efficiency during light loads and idling. Unlike traditional ultrafast diodes, these Gen 3 devices have minimal recovery time, leading to even greater efficiency.
Common uses for these diodes will involve converting AC to DC power and rectifying ultra high frequency DC outputs in power converters used in solar inverters, energy storage systems, industrial machinery, and data centers. These diodes are designed to withstand extreme temperatures up to +175 °C and have a high forward surge rating of 260 A for increased durability. Additionally, the diodes housed in the D²PAK 2L package are equipped with a high CTI molding compound, ensuring reliable electrical insulation at high voltages.
These devices are known for their high reliability and meet RoHS and halogen-free standards. They have undergone rigorous testing, including 2000 hours of higher temperature reverse bias (HTRB) testing and 2000 thermal cycles of temperature cycling testing.
Table outlining specifications of a device.
The new SiC diodes are currently available for sampling and ordering in small or large quantities, with a lead time of 13 weeks.
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